Semiconductor laser device
文献类型：专利
| 作者 | HARA TOSHITAMI; NOJIRI HIDEAKI; SEKIGUCHI YOSHINOBU; HASEGAWA MITSUTOSHI; MIYAZAWA SEIICHI |
| 发表日期 | 1987-11-21 |
| 专利号 | JP1987269384A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To perform a favorable image-formation of laser beams incoming from numerous points with the aid of an optical system of scanning by making the formation so that an active layer has multi-quantum wells and a semiconductor laser of these wells emits its beams in the different directions to one another. CONSTITUTION:Four laminations for N-type GaAs 22, N-type Al GaAs 23, non-doping GaAs, and Al0.2Ga0.8As are performed repeatedly in sequence on an N-type GaAs substrate 21 and finally an active area 24 of multi-quantum wells is formed by laminating GaAs and then, P-type Al0.4Ga0.8As 25 and GaAs 26 are formed according to a molecular beam epitaxy system. After etching up to just this side of the active layer 24 in order to limit an area applied by an electric current, a nitriding silicon film 27 is formed according to a plasma CVD system and only a top part of ridge is processed by etching, resulting in the formation of Cr-Au ohmic electrode and also, resulting in the formation of five independent electrodes 11d-15d after separating them by etching. Then, an Au-Ga electrode is vapor deposited as an ohmic electrode 29 for N-type to cleave resonance faces 16 and 17 after performing a heat treatment. |
| 公开日期 | 1987-11-21 |
| 申请日期 | 1986-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76959]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | HARA TOSHITAMI,NOJIRI HIDEAKI,SEKIGUCHI YOSHINOBU,et al. Semiconductor laser device. JP1987269384A. 1987-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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