Semiconductor light-emitting device
文献类型：专利
| 作者 | SATO SHIRO; ONODERA NORIAKI |
| 发表日期 | 1987-07-07 |
| 专利号 | JP1987152186A |
| 著作权人 | RICOH CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To obtain a device, through which beams are projected in the direction vertical to the surface of a substrate, by forming a projection vertical to one surface of the substrate, demarcating an active layer in the projection and shaping a recess in the active layer from the surface on the reverse side of the substrate. CONSTITUTION:N-type GaAs6 is formed to N-type AlGaAs7 on an N-type GaAs substrate 8 in an epitaxial manner. The columnar projection 6 is shaped through etching, using an SiO2 film 5 as a mask. A P layer 10 and a P layer 19 are formed through the diffusion of Zn, and P-N junctions 11a, 11b are shaped. The substrate 8 is etched using the mixed liquid of NH4OH and H2O2 and an opening 17 aligning with the projection 6 is formed, and Au/Sn electrodes 9 are attached. An Au/Zn/Au electrode 4 is evaporated. The electrode film 4 on the SiO2 film 5 on the end surface of the projection functions as an internal reflecting mirror. A Cu endothermic body 1 is fused at the nose of the projection 6 by In When electricity is conducted, bringing a cooling body 1 to positive potential, layer beams generated near the P-N junction 11a are radiated vertically to the substrate from the opening 17, and heat generated is dissipated to a thermal conductive substance layer 3 and the endothermic body 1 from the side surface of the projection 6, thus effectively keeping an active region at a fixed temperature, then acquiring a stable optical output. |
| 公开日期 | 1987-07-07 |
| 申请日期 | 1985-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76965]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH CO LTD |
| 推荐引用方式 GB/T 7714 | SATO SHIRO,ONODERA NORIAKI. Semiconductor light-emitting device. JP1987152186A. 1987-07-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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