Manufacture of semiconductor device
文献类型：专利
| 作者 | YAMAGUCHI AKIO |
| 发表日期 | 1984-07-03 |
| 专利号 | JP1984114880A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To contrive to increase the degree of freedom for the design of a photosemiconductor device without the necessity of thick growth of an InGaP or InGaAsP layer by selectively removing a substrate with the solution containing ammonium hydroxide and hydrogen peroxide. CONSTITUTION:An N type InGaP layer 2, an InGaAsP layer 3, a P type InGaP layer 4, and a P type GaAs layer 5 are successively grown on an N type GaAs substrate A P-side electrode 6 is formed, an insulation film 7 is provided, heat treatment is performed, thus alloying between the electrode 6 and the layer 5, Cr and Au are evaporated, Au is plated, resulting in the formation of a P-side electrode 6'. The substrate 1 is polished, AuGeNi is evaporated, alloying heat treatment is performed, and then an N-side electrode 8 is formed. It is covered with an SiO2 film 9, an aperture is provided, and a photo lead-out window part 10 is formed by selectively etching the substrate 1 with the mixed aqueous solution of ammonia:hydrogen peroxide=1:20. |
| 公开日期 | 1984-07-03 |
| 申请日期 | 1982-12-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76976]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | YAMAGUCHI AKIO. Manufacture of semiconductor device. JP1984114880A. 1984-07-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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