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文献类型：专利
| 作者 | KITAYAMA KENICHI; SHII WAN |
| 发表日期 | 1989-11-27 |
| 专利号 | JP1989055590B2 |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain the semiconductor laser which can oscillate high-output and short light pulses without a trail by composing a Fabry Perot type resonator with an end plane of a light amplifying part and end planes of light phase modulation parts. CONSTITUTION:When a forward d.c. current 22 flows in a P-N junction, induced emission of light occurs between electrodes 12 and 13 in a light amplifying part 1 In light phase modulation parts 18 and 25, an electrode 13, and N GaAs layer 17 and an N Ga1-xAlxAs layer 14 are common to the light amplifying part 11 and furthermore, an N Ga1-xAlxAs layer 16 as a waveguide is laminated with being lamified from the part 1 On these layers, a P Ga1-yAlyAs layer 19 and electrodes 20 and 21 are laminated corresponding to the respective ramification. A high-frequency voltage 23 is applied to the electrode 20 and it is applied to the electrode 21 through a high frequency phase modulator 24. A main axis of (100) crystal of the GaAs substrate 17 is vertical to a direction of propagation of light waves shown by the arrow A and only the phase of TE mode as a light wave which is transmitted in the light resonator can be modulated by the light phase modulation part 18. |
| 公开日期 | 1989-11-27 |
| 申请日期 | 1983-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76982]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | KITAYAMA KENICHI,SHII WAN. -. JP1989055590B2. 1989-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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