中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device

文献类型:专利

作者SHIGIHARA, KIMIO
发表日期2014-07-01
专利号US8767788
著作权人MITSUBISHI ELECTRIC CORPORATION
国家美国
文献子类授权发明
其他题名Semiconductor laser device
英文摘要A semiconductor laser includes a ridge section on top of a semiconductor laminated section. The ridge section is a stripe-shaped projection or ridge and serves as a constriction structure for constricting current and light. A pair of terrace sections is located on top of the semiconductor laminated structure. The terrace sections are raised island portions sandwiching and spaced from the ridge section. An active region is located below the ridge section as viewed in plan. High refractive index regions are located on both sides of the active region and below the terrace sections, respectively. Cladding regions are located between the active region and the high refractive index regions. The high refractive index regions have a higher refractive index than the cladding regions.
公开日期2014-07-01
申请日期2013-05-23
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/76988]  
专题半导体激光器专利数据库
作者单位MITSUBISHI ELECTRIC CORPORATION
推荐引用方式
GB/T 7714
SHIGIHARA, KIMIO. Semiconductor laser device. US8767788. 2014-07-01.

入库方式: OAI收割

来源:西安光学精密机械研究所

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