Semiconductor laser
文献类型：专利
| 作者 | NAGASAKA HIROKO; HATAGOSHI GENICHI; MOGI NAOTO |
| 发表日期 | 1987-09-09 |
| 专利号 | JP1987204586A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To offer a semiconductor laser that gives an oscillation in a stable fundamental transverse mode ranging from a low-output operation to a high-output operation by a method wherein a dissimilar layer is formed of an Al-containing compound semiconductor material, the refractive index of a first coated layer is made larger than that of a clad layer on the opposite side of an active layer to a substrate, the refractive index of a second coated layer is made smaller than that of the first coated layer and the resistivity and film thickness of a clad layer on the same side of the active layer as the substrate are each set at specific values. CONSTITUTION:A dissimilar layer is formed of an Al-containing compound semiconductor material, a first coated layer 16 on the side near an active layer 13 is a layer having a refractive index larger than that of a clad layer 14 on the opposite side of a substrate 11 to the active layer 13 and a second coated layer 17 on the side farther from the active layer 13 than the first coated layer 16 is formed into a layer having a refractive index smaller than that of the first coated layer. The resistivity (rho2) of the clad layer 14 on the opposite side of the above active layer to the substrate 11 and the film thickness (d2) of said clad layer are set in such a way as to satisfy relations, and also, the resistivity (rho3) of a clad layer 12 on the same side of the active layer 13 as the substrate is set at 0.1[OMEGAcm] or less. Thereby, a stable fundamental transverse mode can be obtained. |
| 公开日期 | 1987-09-09 |
| 申请日期 | 1986-03-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77001]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | NAGASAKA HIROKO,HATAGOSHI GENICHI,MOGI NAOTO. Semiconductor laser. JP1987204586A. 1987-09-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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