Semiconductor laser device
文献类型：专利
| 作者 | ADACHI AKIHIRO |
| 发表日期 | 1990-06-15 |
| 专利号 | JP1990156691A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To hold a narrow emitting spectral beam width and to make an oscillation wavelength variable by independently injecting a current to an active region having an active layer formed with a diffraction grating and a phase control region, and further feeding back a light externally to the phase control region. CONSTITUTION:An active region 1 and a phase control region 2 are provided. The active region 1 has an active layer 5 formed with a diffraction grating 4 for diffracting a light, and the phase control region 2 has an optical guide layer 3 formed continuously to the active layer 4 for varying a refractive index by an injected current. A current is injected to the active region 1 and the phase control region 2 by electrodes 6, 7 provided independently from each other. An emitting light from the emitting end face 9b of the optical guide layer 3 of the phase control region 2 of the laser light formed by oscillation is reflected on a reflecting mirror 10, and again introduced to the phase control region 2 as a feedback light. Thus, a narrow emitting light spectral beam width is held to vary the oscillation wavelength. |
| 公开日期 | 1990-06-15 |
| 申请日期 | 1988-12-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77009]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ADACHI AKIHIRO. Semiconductor laser device. JP1990156691A. 1990-06-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。