Photo-semiconductor element
文献类型：专利
| 作者 | NAKANO HIROYUKI; SASAKI SHINYA; TANAKA KATSUKI; IMOTO KATSUYUKI; MAEDA MINORU |
| 发表日期 | 1987-08-13 |
| 专利号 | JP1987185387A |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photo-semiconductor element |
| 英文摘要 | PURPOSE:To enhance the coupling efficiency of an photo-semiconductor element having a light emitting unit and a photodetector with an optical fiber by forming a recess, a projection and a cutout to become a reference surface for positioning the element on the upper or lower surface when securing the element on a mount. CONSTITUTION:An N-type InP clad layer 6, an InGaAsP active layer 5, a P-type InP clad layer 4, an InGaAsP cap layer 3 and a P type diffused layer 2 are laminated and grown on an N-type InP substrate 7, the layer 2 is covered with a P-type side electrode 1 and the back surface of the substrate 7 is covered with an N-type side electrode 8. Then, the electrode 1 to the layer 6 are formed in a stripe shape by laser working, and the sides of the layer 2 to the layer 6 are formed in recesses by dry etching with photomask. Thereafter, the recess is buried with a laminate of a P-type InP block layer 10 and an N-type InP block layer 9, and the outer surface and the electrode 1 are used as a positioning reference surface. |
| 公开日期 | 1987-08-13 |
| 申请日期 | 1986-02-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77013]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | NAKANO HIROYUKI,SASAKI SHINYA,TANAKA KATSUKI,et al. Photo-semiconductor element. JP1987185387A. 1987-08-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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