Semiconductor light emitting device
文献类型:专利
作者 | KIHARA KATSUHIRO; KOTAKI YUJI |
发表日期 | 1988-03-14 |
专利号 | JP1988058983A |
著作权人 | FUJITSU LTD |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor light emitting device |
英文摘要 | PURPOSE: To obtain a semiconductor light emitting device which is suitable for practical use such as optical communication by a method wherein the phase of a light returning from an optical waveguide to an active region is controlled by electrodes and the spectral width of the oscillated light is selected. CONSTITUTION:A distributed reflection type laser device 10 which has an active region and a diffraction lattice, an optical waveguide 11 whose one end is coupled with the laser device 10 and which is refracted and terminated by a high reflectance treated surface and facing electrodes 16 and 17 which hold at least a part of the optical waveguide 11 between them are provided. In this semiconductor light emitting device, a required light output is taken out from the end surface of the laser device 10 and the phase of the light which returns to the laser device 10 from the optical waveguide 11 is controlled by the refractive index of the optical waveguide 11 which is held between the electrodes 16 and 17 to control the spectral width of the oscillated light narrow. By refracting the optical waveguide 11 and providing a means to control the phase, the semiconductor light emitting device which is suitable for practical use such as optical communication can be obtained. |
公开日期 | 1988-03-14 |
申请日期 | 1986-08-29 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/77016] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU LTD |
推荐引用方式 GB/T 7714 | KIHARA KATSUHIRO,KOTAKI YUJI. Semiconductor light emitting device. JP1988058983A. 1988-03-14. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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