Semiconductor light emitting element
文献类型:专利
作者 | SUZAKI SHINZO |
发表日期 | 1992-02-20 |
专利号 | JP1992053178A |
著作权人 | FUJIKURA LTD |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor light emitting element |
英文摘要 | PURPOSE:To emit a light from one emitting end, to simplify manufacturing steps, regulating work, etc., and to reduce its cost by connecting a distributed reflecting region to a plurality of optical waveguides of a branched region, and providing a plurality of optical waveguides each having distributed reflecting mechanism. CONSTITUTION:Optical waveguides 33a-33d are formed horizontally at the upper position of a p-type InP substrate 22, and the ends of the waveguides 33a-33d are respectively connected to optical waveguides 34-36 of a distributed reflecting region 26. The region 26 oscillates in a dynamic single mode by Bragg's reflection by a diffraction grating (distributed reflecting mechanism) in which oscillated laser light is formed in the waveguides 34 (35, 36). The waveguides 34 (35, 36) are connected to the waveguides 33b (33c, 33d) of a branched region 35. These waveguides 34-36 have diffraction gratings of different pitches. and horizontally formed in parallel on the upper position of the substrate 22. The end faces of the waveguides 34-36 are formed in reflecting mechanisms. |
公开日期 | 1992-02-20 |
申请日期 | 1990-06-18 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/77018] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJIKURA LTD |
推荐引用方式 GB/T 7714 | SUZAKI SHINZO. Semiconductor light emitting element. JP1992053178A. 1992-02-20. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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