Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | TANAKA TOSHIAKI; MINAGAWA SHIGEKAZU; KAJIMURA TAKASHI |
| 发表日期 | 1990-05-23 |
| 专利号 | JP1990134887A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain quantum fine lines and quantum boxes which oscillate using a super low threshold current by introducing a multi-quantum well structure in which quantum well layers are formed of AlGaAs crystals and quantum barrier layers are formed of AlGaInP crystals. CONSTITUTION:For example, a p-type (AlXGa1-X)0.51In0.49P clad layer 7 (thickness: 0.5-0mum, X=0.45-0.55), a p-type Ga0.51In0.49P layer 8 (thickness: 0.05-0.1mum), an n-type GaAs layer 9 (thickness: 0.5-0mum) are formed with an MBE technique or an MOCVD technique. After that, a Zn diffusion region 10 is formed by diffusing Zn. Then a p-type electrode 11 and an n-type electrode 12 are vaporized and they are cut into the form of each element by performing cleavage-scribing. In other words, quantum fine lines or quantum boxes which are arranged in the same width are formed by a vertical crystal processing technology and a selective etching process. In the case of the vertical crystal processing technology, a three layer resist is used as a mask so as to realize crystal processing for the thickness of the order of 0.1mum. |
| 公开日期 | 1990-05-23 |
| 申请日期 | 1988-11-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77020]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIAKI,MINAGAWA SHIGEKAZU,KAJIMURA TAKASHI. Semiconductor laser element and manufacture thereof. JP1990134887A. 1990-05-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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