Manufacture of semiconductor laser
文献类型：专利
| 作者 | IKUTA AKIHISA; ISHIGURO NAGATAKA |
| 发表日期 | 1988-04-01 |
| 专利号 | JP1988072177A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To realize an excellent characteristic with respect to a high output level, a basic horizontal mode and a low threshold electric current by a method wherein, after an inversely structured mesa has been formed by etching using a bromine methanol solution, a clad layer at the lower part is etched to form a stripe by means of hydrochloric acid so that the second epitaxial growth can be made. CONSTITUTION:During the first liquid phase epitaxial growth, a stripe-like pattern with a crystal orientation is formed on a flat N-type InP substrate 6 in such a way that a lattice is aligned in succession, and, by means of etching using a bromine methanol solution, an active layer 4 with a width of about 2 mum is formed at the position where an inverted mesa shows the minimum width. After that, by using a mixed solution which is composed of one part of hydrochloric acid and two parts of phosphoric acid, an N-type InP layer 5 is etched almost vertically (about 2.5 mum). Then, during the second liquid phase epitaxial growth, the first buried P-type InP layer 8 is grown to the height of the active layer 4, and, after that, the second buried N-type InP layer 7 is growth. After the pattern of an SiO2 film 1 has been removed, an electrode part is formed. |
| 公开日期 | 1988-04-01 |
| 申请日期 | 1986-09-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77032]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | IKUTA AKIHISA,ISHIGURO NAGATAKA. Manufacture of semiconductor laser. JP1988072177A. 1988-04-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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