Semiconductor laser
文献类型：专利
| 作者 | SUEMATSU YASUHARU; ARAI SHIGEHISA |
| 发表日期 | 1989-06-26 |
| 专利号 | JP1989161886A |
| 著作权人 | SUEMATSU YASUHARU |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To increase output efficiency, by providing two distributed reflectors using diffraction gratings, arranging a phase adjusting region between the diffraction gratings, making the whole part or a part of the one distributed reflector an active layer, and making the whole part or a part of the other distributed reflector into a waveguide region of wide energy band gap. CONSTITUTION:In a waveguide layer 40, a distributed reflection region L1 under a diffraction grating 46 forms an active region. On the other hand, the distributed reflection region L2 under a diffraction grating 48 and a phase adjusting region (t) are composed of a material having wide energy band gap, and form passive regions. In the waveguide region 40, the distributed reflection region L1 acts as a DBF type reflection, and the distributed reflection region L2 acts as a DBR type reflection. Therefore a laser oscillation is generated, whose wavelength is determined by the propagation constant beta of the distributed reflection regions L1, L2 and the pitches A1, A2 of the diffraction gratings. Thereby a semiconductor laser is obtained wherein output is large, output efficiency is high, and mass productivity is superior. |
| 公开日期 | 1989-06-26 |
| 申请日期 | 1987-12-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77034]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUEMATSU YASUHARU |
| 推荐引用方式 GB/T 7714 | SUEMATSU YASUHARU,ARAI SHIGEHISA. Semiconductor laser. JP1989161886A. 1989-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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