Semiconductor light-emitting device
文献类型：专利
| 作者 | KIHARA KATSUHIRO |
| 发表日期 | 1989-08-08 |
| 专利号 | JP1989196884A |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To obtain a surface emission laser, the plane of polarization of which is kept stable, by forming an active layer into an elliptical shape in the surface emission type semiconductor laser. CONSTITUTION:An InGaAsP active layer 2, a P-InP buried layer 3, an N-InP current block layer 4 and a P-lnP clad layer 5 are shaped onto an N-InP substrate The active layer 2 is patterned to an elliptical shape. Electrodes 6, 7 are formed to the substrate 1 and the clad layer 5. The substrate 1 on the active layer 2 is dug approximately near a light-emitting region. Consequently, the plane of polarization of laser beams emitted from the elliptical light-emitting region is kept stable. Accordingly, a surface emission laser, the plane of polarization of which is held stable, is acquired. |
| 公开日期 | 1989-08-08 |
| 申请日期 | 1988-02-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77036]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | KIHARA KATSUHIRO. Semiconductor light-emitting device. JP1989196884A. 1989-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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