半導体レ-ザ装置の製造方法
文献类型：专利
| 作者 | 一色 邦彦 |
| 发表日期 | 1994-05-02 |
| 专利号 | JP1994034426B2 |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置の製造方法 |
| 英文摘要 | PURPOSE:To control the length of a mixed crystal region at several mum or less, to improve effective reflectivity and to reduce an oscillating threshold current value, by diffusing impurities or implanting ions through an etched mirror surface, which is formed on the side surface of a groove, and forming the mixed crystal region, in which a super lattice layer or a multiple quantum well layer is made to be a disordered state. CONSTITUTION:On a semiconductor substrate 1, at least a lower clad layer 2, a super lattice layer 3 or a multiple quantum well layer and an upper clad layer 4 are sequentially formed, and a laminated structure is provided in a semiconductor laser device. In manufacturing said laser device, a part down to the lower clad layer 2 is etched, and a groove 11 is formed. An etched mirror surface 9 is formed on the side surface of the groove 1 Impurities are diffused or ions are implanted through the etched mirror surface 9. The super lattice layer or the multiple quantum well layer in a diffused or implanted region 7 is made to be a disordered state uniformly. Thus a disordered mixed crystal region 6 is formed. For example, an Si3N4 film 10 is formed on a contact layer 5. The groove 11 is formed by an RIE method. Then, Zn is diffused and the mixed crystal region 6 is formed. Thereafter electrodes 8a and 8b are formed. The device is divided into chips. |
| 公开日期 | 1994-05-02 |
| 申请日期 | 1986-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77045]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | 一色 邦彦. 半導体レ-ザ装置の製造方法. JP1994034426B2. 1994-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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