Manufacture of semiconductor laser
文献类型：专利
| 作者 | HORIKAWA HIDEAKI; OGAWA HIROSHI; KAWAI YOSHIO; WADA HIROSHI |
| 发表日期 | 1988-11-24 |
| 专利号 | JP1988287080A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enable operation of the title laser at a high oscillation efficincy, a low threshold value current and high output, by utilizing the surface azimuth dependence of a liquid phase epitaxial growth (LPE) method for selectively forming a current block layer on the surface except a groove. CONSTITUTION:An n-type InP current block layer 3, a GaInAsP buffer layer 4, a p-type InP clad layer 5, a GaInAsP active layer 6 and an n-type InP protective layer 7 are formed by turns on a p-type InP substrate 1 provided with a groove by an LPE method. Thereby, the layer 3 does not grow in the inside of the groove due to the surface azimuth dependence of the LPE method. The layer 4 has only a little surface azimuth dependency so as to grow in the inside of the groove and the layers after the layer 5 grow also thereon. Later, an inverse mesa type stripe is formed by etching, while n-type and p-type InP current stricture layers 10, 11 are made to grow by the LPE method. When this laser operated, an interface of the layers 3, 4 and the layers 10, 11 becomes an inverse bias, the current does not flow in the part of a grating to be an outer waveguide path. Accordingly, an operation of a good oscillation efficiency, a low threshold value current and a high output can be per-formed. |
| 公开日期 | 1988-11-24 |
| 申请日期 | 1987-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77049]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HORIKAWA HIDEAKI,OGAWA HIROSHI,KAWAI YOSHIO,et al. Manufacture of semiconductor laser. JP1988287080A. 1988-11-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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