Semiconductor laser
文献类型：专利
| 作者 | MIZUOCHI HITOSHI |
| 发表日期 | 1992-11-10 |
| 专利号 | JP1992320080A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser in which a current is efficiently injected to an active layer. CONSTITUTION:In a semiconductor laser of a double hetero junction type multilayer epitaxial structure having an active region on a semiconductor substrate 1, optical guide layers 5a each having a Bragg's waveguide mechanism are periodically provided in an upper clad layer 6a on an active layer 3, and conductivity type of the layer 5a is made the same as that of the substrate The guide layer provides a current blocking effect, no current flows to the guide layer, trap of electrons does not occur, a current is uniformly injected in the active layer, a linearity of an optical output is improved, and high frequency characteristic of an analog modulation is improved. |
| 公开日期 | 1992-11-10 |
| 申请日期 | 1991-04-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77054]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MIZUOCHI HITOSHI. Semiconductor laser. JP1992320080A. 1992-11-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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