Semiconductor laser
文献类型：专利
| 作者 | FURUYAMA HIDETO; KUROBE ATSUSHI |
| 发表日期 | 1989-03-28 |
| 专利号 | JP1989082586A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduced absorption loss for laser oscillation wavelength, and obtain a single vertical mode semiconductor laser wherein threshold current is small, oscillation efficiency is high, and temperature stability is excellent, by setting the forbidden bandwidth of an active layer turning to a host crystal wider than the bright line energy of bright line source impurity, and arranging closely a carrier injection layer whose forbidden bandwidth is narrower than the bright line energy. CONSTITUTION:An active layer 4 is added with bright line source impurity with atomic radiation, and the forbidden bandwidth is set wider than the bright line energy of the bright line source impurity. Between two clad layers 2 and 5, a carrier injection layer 3 is arranged, whose forbidden bandwidth is narrower than the bright line energy of the bright line source impurity. In this constitution, when carrier is injected from the outside, positive hole is injected from the P-type InP 5 side into an active layer 4 to fill the acceptor level Ea, and electron is injected from the N-type InP 2 side into the carrier injection layer 3. Electron injected into the carrier injection layer 3 recombines with hole of Ea and vanishes to radiate a light corresponding to the bright line of Er. |
| 公开日期 | 1989-03-28 |
| 申请日期 | 1987-09-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77066]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | FURUYAMA HIDETO,KUROBE ATSUSHI. Semiconductor laser. JP1989082586A. 1989-03-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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