Semiconductor light emitting device
文献类型：专利
| 作者 | KONDO MASATO; ANAYAMA CHIKASHI |
| 发表日期 | 1991-12-02 |
| 专利号 | JP1991270187A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To reduce oscillation threshold electric current density by allowing an activation layer to be sandwiched between a guide layers whose refractive index spatially changes and designing distortion quantum well structure where the thickness of the guide layer is thinner than a critical film thickness where misfit dislocation is generated. CONSTITUTION:As a GaXIn1-XP quantum well activation layer 8 is a very thin film, it is a quantum well structure sandwiched between (AlYGa1-Y)XIn1-XP clad layers 4 and 12. The (AlYGa1-Y)XIn1-XP clad layers 4 and 12 and (AlVGa1-V)XIn1-XP guide layers 6 and 10 whose composition are so controlled as to obtain x 0.51 where the lattice constant mismatching of a lattice constant 5 a GaAs substrate 52 is controlled below 2X10 so that lattice matching may be substantially attained. On the contrary, the composition ratio x of the GaXIn1-XP quantum lattice well activation layer is x<0.51, and lattice mismatching is produced between the adjacent (AlVGa1-V)XIn1-XP guide layers 6 and 10. However, the GaXIn1-XP quantum well activation layer 8 is thinner than the critical thickness. Therefore, no misfit dislocation is produced by this mismatching. |
| 公开日期 | 1991-12-02 |
| 申请日期 | 1990-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77067]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KONDO MASATO,ANAYAMA CHIKASHI. Semiconductor light emitting device. JP1991270187A. 1991-12-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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