Semiconductor device
文献类型：专利
| 作者 | FUCHIGAMI NOBUTAKA; YAZAWA MASAMITSU; MOCHIZUKI KAZUHIRO |
| 发表日期 | 1992-05-01 |
| 专利号 | JP1992130733A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To manufacture a fine compound semiconductor or bipolar transistor and to highly integrated a circuit by a method wherein a compound semiconductor whisker is used as an emitter or a collector of the compound semiconductor bipolar transistor. CONSTITUTION:For example, when an npn transistor using GaAs is of an emitter-top structure, an emitter by a whisker 1 composed of n-type GaAs is grown selectively and formed on a base layer 2 of p-type GaAs formed by an epitaxial growth operation. In order to reduce the parasitic resistance of the emitter, an ohmic electrode 5 for the emitter is formed so as to be close to the base layer 2 as far as possible. When the transistor is of a collector-top structure, an n-type GaAs whisker 1 is used as a collector. Since a collector area is fine in this case, a collector capacity can be reduced. Since a depletion layer form a base is extended at several hundred nm at the collector, an ohmic electrode 5 for the collector is formed by keeping an interval of the width or higher of the depletion layer from the base layer 2. |
| 公开日期 | 1992-05-01 |
| 申请日期 | 1990-09-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77083]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | FUCHIGAMI NOBUTAKA,YAZAWA MASAMITSU,MOCHIZUKI KAZUHIRO. Semiconductor device. JP1992130733A. 1992-05-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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