中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser and method for fabricating the same

文献类型:专利

作者UEDA, DAISUKE; YURI, MASAAKI; HASEGAWA, YOSHIAKI; MATSUDA, KENICHI
发表日期2010-06-15
专利号US7738525
著作权人PANASONIC CORPORATION
国家美国
文献子类授权发明
其他题名Semiconductor laser and method for fabricating the same
英文摘要A semiconductor laser (101) includes a first cladding layer (103), an active layer (105) and a second cladding layer (108). A window region (115) including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face (113) and a rear end face (114) of a laser resonator. The window region (115) is formed by exposing the front end face (113) and the rear end face (114) to carbon fluoride (CF4) plasma. The effective band gap of a portion of the active layer (105) disposed in the window region (115) is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD.
公开日期2010-06-15
申请日期2007-07-09
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/77114]  
专题半导体激光器专利数据库
作者单位PANASONIC CORPORATION
推荐引用方式
GB/T 7714
UEDA, DAISUKE,YURI, MASAAKI,HASEGAWA, YOSHIAKI,et al. Semiconductor laser and method for fabricating the same. US7738525. 2010-06-15.

入库方式: OAI收割

来源:西安光学精密机械研究所

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