Semiconductor laser and method for fabricating the same
文献类型：专利
| 作者 | UEDA, DAISUKE; YURI, MASAAKI; HASEGAWA, YOSHIAKI; MATSUDA, KENICHI |
| 发表日期 | 2010-06-15 |
| 专利号 | US7738525 |
| 著作权人 | PANASONIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method for fabricating the same |
| 英文摘要 | A semiconductor laser (101) includes a first cladding layer (103), an active layer (105) and a second cladding layer (108). A window region (115) including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face (113) and a rear end face (114) of a laser resonator. The window region (115) is formed by exposing the front end face (113) and the rear end face (114) to carbon fluoride (CF4) plasma. The effective band gap of a portion of the active layer (105) disposed in the window region (115) is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD. |
| 公开日期 | 2010-06-15 |
| 申请日期 | 2007-07-09 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77114]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PANASONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | UEDA, DAISUKE,YURI, MASAAKI,HASEGAWA, YOSHIAKI,et al. Semiconductor laser and method for fabricating the same. US7738525. 2010-06-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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