Manufacture of semiconductor laser
文献类型：专利
| 作者 | NISHIDA TOSHIO; SUGIURA HIDEO; TAMAMURA TOSHIAKI |
| 发表日期 | 1992-10-20 |
| 专利号 | JP1992296079A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enable a semiconductor laser to be manufactured through a small number of processes by a method wherein a semiconductor substrate body is formed of a first semiconductor laminate, a second and a third semiconductor laminate are formed with a groove provided with a stripe-like plane pattern, and then a fourth semiconductor laminate is formed to fill the groove. CONSTITUTION:A semiconductor laminate 4 composed of semiconductor layers 2 and 3 is formed on a semiconductor substrate 1 for the formation of a semiconductor substrate body 5. A groove 8 provided with a stripe-like plane pattern, and semiconductor layer bodies 4L and 4R are provided. Then, clad layers 9 and 10, a guide layer 11, an active layer 121, a guide layer 13, a clad layer 14, a clad layer 15, and an electrode layer 16 are laminated in this order on the semiconductor substrate body 5 for the formation of a semiconductor laminate 17, where the semiconductor laminate 17 is formed so as to nearly fill the groove 8. |
| 公开日期 | 1992-10-20 |
| 申请日期 | 1991-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77115]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | NISHIDA TOSHIO,SUGIURA HIDEO,TAMAMURA TOSHIAKI. Manufacture of semiconductor laser. JP1992296079A. 1992-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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