Manufacture of semiconductor laser device
文献类型：专利
| 作者 | KADOWAKI TOMOKO |
| 发表日期 | 1991-04-26 |
| 专利号 | JP1991101285A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To enable positioning to be made in self-aligned manner by forming a solid phase diffusion source only at a recessed part on a ridge utilizing the difference in level between the recessed part on the ridge and a flat part. CONSTITUTION:An n-type first clad layer 2, an activation layer 3, a p-type second clad layer 4, and a p-type cap layer 5 are formed in sequence on an n-type substrate 1 and a ridge with a bottom halfway through the p-type second clad layer 4 is formed through the p-type cap layer 5. Then, an n-type current block layer 6 is formed on it. Then, after burying a protruding part on a ridge with a photo resist 7, the surface is flattened, O2 is subjected to ashing from the surface, and only a protruding part on the ridge is exposed. After that, a solid phase diffusion source 8 and an SiO2 9 is formed on the entire surface and the solid-phase diffusion source 8 and the SiO2 9 which are adhered to an area other than the protruding part on the ridge are eliminated, thus forming the solid-phase diffusion source 8 and SiO2 9 only at the protruding part on the ridge. Thus, it is not necessary to perform mask matching on a narrow protruding part and it is possible to form the solid-phase diffusion source 8 on the protruding part in self-aligned manner. |
| 公开日期 | 1991-04-26 |
| 申请日期 | 1989-09-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77118]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KADOWAKI TOMOKO. Manufacture of semiconductor laser device. JP1991101285A. 1991-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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