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文献类型：专利
| 作者 | KUSUKI TOSHIHIRO; YAMAGUCHI AKIO |
| 发表日期 | 1987-08-25 |
| 专利号 | JP1987039839B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To improve a luminous efficiency without decreasing current dependency of a light emission output by a method wherein light absorbing layers are arranged on both sides of a lower region of a P-electrode in a clad layer on the P-electrode side, and band gaps in the light absorbing layer are suitably settled. CONSTITUTION:An N-electrode side clad layer 13 comprising N-InP is formed on an N-InP substrate 12 having the N-electrode 11, an active layer 14 comprising N-InGaAs being formed on the clad layer 13 and in addition, the P-electrode 18 is formed which controls a light emitting region 17 through a P-electrode side clad layer 15 comprising P-InP and a contact layer 16 comprising P-GaAsP. The light absorbing layers 19 are burried at the positions isolated from the active layer 15 on the both sides holding the lower region of the P-electrode 18 therebetween in the P-electrode side clad layer 15. The part nearest to the active layer 15 of the light absorbing layer 19 is composed of a layer 19a having the band gap larger than a light emission wavelength of a laser element, and the upper layer is comprised of a layer 19b having the band gap smaller than the light emission wavelength of the laser element. |
| 公开日期 | 1987-08-25 |
| 申请日期 | 1980-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77120]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KUSUKI TOSHIHIRO,YAMAGUCHI AKIO. -. JP1987039839B2. 1987-08-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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