Semiconductor laser
文献类型：专利
| 作者 | HORIE, HIDEYOSHI |
| 发表日期 | 2010-09-07 |
| 专利号 | US7792170 |
| 著作权人 | MITSUBISHI CHEMICAL CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A semiconductor laser having an oscillation wavelength λ (nm) and comprising at least a substrate, a first-conduction-type clad layer having an average refractive index N1cld, an active layer structure having an average refractive index NA, and a second-conduction-type clad layer having an average refractive index N2cld. This has a first-conduction-type subwave guide layer having an average refractive index N1SWG between the substrate and the first-conduction-type clad layer, and has a first-conduction-type low-refractive-index layer having an average refractive index N1LIL between the subwaveguide layer and the substrate. In this, the refractive indexes satisfy specific relational formulae. The semiconductor laser has a stable oscillation wavelength against the change of current/light output/temperature. |
| 公开日期 | 2010-09-07 |
| 申请日期 | 2005-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77132]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CHEMICAL CORPORATION |
| 推荐引用方式 GB/T 7714 | HORIE, HIDEYOSHI. Semiconductor laser. US7792170. 2010-09-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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