Halbleiterlaservorrichtung
文献类型：专利
| 作者 | NAITO YUMI; OEDA YASUO; FUJIMOTO TSUYOSHI |
| 发表日期 | 2005-03-17 |
| 专利号 | DE69828942D1 |
| 著作权人 | MITSUI CHEMICALS INC. |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | Halbleiterlaservorrichtung |
| 英文摘要 | Optical guide layers (4, 8) are formed on both faces of the active layer (6), respectively, which optical guide layers have a band gap wider than that of the active layer (6), an n-type cladding layer (3) and a p-type cladding layer (9) respectively formed so as to sandwich the active layer (6) and the optical guide layers (4, 8) therebetween, which cladding layers have a band gap wider than those of the optical guide layers (4, 8), and carrier blocking layers (5, 7) are respectively formed between the active layer (6) and the optical guide layers (4, 8), which carrier blocking layers have a band gap wider than those of the active layer (6) and the optical guide layers (4, 8). The refractive index of the p-type cladding layer (9) is lower than that of the n-type cladding layer (3). With such constitution inner losses are limited to a low level, as free carrier absorption is reduced, and the electric and thermal resistances of a semiconductor laser device are reduced, with the result that the laser device is enhanced in efficiency and output power. |
| 公开日期 | 2005-03-17 |
| 申请日期 | 1998-11-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77143]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUI CHEMICALS INC. |
| 推荐引用方式 GB/T 7714 | NAITO YUMI,OEDA YASUO,FUJIMOTO TSUYOSHI. Halbleiterlaservorrichtung. DE69828942D1. 2005-03-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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