Semiconductor laser
文献类型：专利
| 作者 | OSHIMA MASAAKI; TAKEUCHI YOSHINORI; HASE NOBUYASU |
| 发表日期 | 1987-10-29 |
| 专利号 | JP1987248282A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To easily obtain a single-vertical-mode semiconductor layer, by providing a dielectric multilayer film consisting of layers having a thickness equal to a wavelength of 1/2n multiplied by an odd number wherein (n) designates a refractive index. CONSTITUTION:An etching-stop layer 2, an N-type clad layer 3, an active layer 4, a P-type clad layer 5, a cap layer 6 and an electrode 7 are formed on an N-type InP substrate The structure is etched such that the ends of the active layer 4 are inclined by 45 degrees, and a reflecting film 9 consisting of an SiO2 layer, an Si layer and an Au layer is provided on the inclined end faces. An electrode 10, the substrate 1 and the stop layer 2 are removed to form circular windows 11 in the regions where laser light from the active layer 4 are guided by the reflecting film 9, and Si3N4 and SiO2 layers are deposited alternately in each of the windows to form a dielectric multilayer film 12. One of the component layers of the multilayer film 12 is provided with a thickness corresponding to 1/2n of a wavelength (n designates a refractive index) multiplied by an odd number. According to this construction, the laser is allowed to have a sharp reflectivity only at an oscillation wavelength and serves just as a DBR laser. In this manner, a single-vertical-mode semiconductor layer can be manufactured more easily than prior arts using diffraction gratings. |
| 公开日期 | 1987-10-29 |
| 申请日期 | 1986-04-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77147]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OSHIMA MASAAKI,TAKEUCHI YOSHINORI,HASE NOBUYASU. Semiconductor laser. JP1987248282A. 1987-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。