Manufacture of semiconductor element
文献类型：专利
| 作者 | KANEKO TADAO; YAMASHITA SHIGEO; YAMANAKA AKIYOSHI; KAYANE NAOKI; KAJIMURA TAKASHI; TANAKA TOSHIAKI; HASEGAWA NORIO; TANAKA TOSHIHIKO; ONO YUICHI; KONO TOSHIHIRO |
| 发表日期 | 1988-06-01 |
| 专利号 | JP1988128689A |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor element |
| 英文摘要 | PURPOSE:To obtain the deep and vertical edge surface of a semiconductor laser by a method wherein a first layer organic layer, a second layer compound layer and a third layer photo resist layer are formed on a substrate to be processed, the desired patterns are transferred to the third, second and first layers in order, a mask having the vertical side is formed on the substrate to be processed, and the dry etching method is used. CONSTITUTION:A first layer organic layer 2 is formed on a substrate having a semiconductor laser element, orthotitanic acid is mixed to a silicon compound to be applied, and the solution is spin applied and baked to form a middle layer 3. Then a photo resist pattern 4 is transferred to the middle layer 3 according to dry etching to form a pattern 3', and the pattern thereof is transferred to the first layer organic layer 2 using the pattern 3' as a mask according to dry etching to form a pattern 2'. After then the deep and vertical resonator surface 5 of a semiconductor laser is formed according to dry etching using the vertical pattern 2' as a mask. Moreover after the surface is flattened by burying grooves with semiconductor layers formed according to the MO-CVD method, dry etching is performed, and the surface of resonator of the semiconductor laser having no unevenness can be formed. |
| 公开日期 | 1988-06-01 |
| 申请日期 | 1986-11-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77149]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | KANEKO TADAO,YAMASHITA SHIGEO,YAMANAKA AKIYOSHI,et al. Manufacture of semiconductor element. JP1988128689A. 1988-06-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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