Semiconductor laser
文献类型：专利
| 作者 | TAKENAKA NAOKI; OOSHIMA MASAAKI; HIRAYAMA NORIYUKI; KINO YUKIHIRO |
| 发表日期 | 1985-04-03 |
| 专利号 | JP1985057990A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To unnecessitate the process of cleavage for formation of a reflection end face by a method wherein a structure in which a laser beam is picked out from the lower surface of a semiconductor substrate. CONSTITUTION:After SiO2 13 and Au 14 have been vapor-deposited on the upper surface of the wafer whereon a V-groove consisting of and faces is formed in direction, the lower surface of the wafer is mirror- polished, and the thickness of the wafer is brought to 200mum or thereabout by performing an etching. Then, a -directioned groove consisting of and faces is formed by performing a photolithographic process and an etching on the lower surface of the wafer. Subsequently, resist 15 is applied in the V-groove located on the upper surface of the wafer, SiO2 16 and Au 17 are vapor-deposited in stripe form in direction on the lower surface of the wafer at the part directly below the face on one side of the V-groove located on the upper surface of the wafer, and the SiO2 films 12 and 13 on the upper surface of the wafer and the Au 14 located on the films 12 and 13 are removed by applying resist on the lower surface of the wafer and by performing an etching thereon. |
| 公开日期 | 1985-04-03 |
| 申请日期 | 1983-09-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77153]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | TAKENAKA NAOKI,OOSHIMA MASAAKI,HIRAYAMA NORIYUKI,et al. Semiconductor laser. JP1985057990A. 1985-04-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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