Semiconductor laser device and method for manufacturing the same
文献类型：专利
| 作者 | OKAJIMA, MASAKI; MOTEGI, NAWOTO; MUTO, YUHEI |
| 发表日期 | 1984-07-25 |
| 专利号 | EP0114109A2 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and method for manufacturing the same |
| 英文摘要 | A rib-waveguide semiconductor laser device comprising a first clad layer (22), an active layer (23), an optical rib-waveguide layer (24) and a second clad layer (25), each composed of III-V semiconductor material, and sequentially formed on an insulating substrate (21) or a III-V semiconductor substrate (21), wherein the rib-waveguide layer (24) contains aluminum. A method for manufacturing the semiconductor laser device as defined above wherein the second clad layer (25) is formed by metal-organic material chemical vapor deposition or molecular beam epitaxy. |
| 公开日期 | 1984-07-25 |
| 申请日期 | 1984-01-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77157]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | OKAJIMA, MASAKI,MOTEGI, NAWOTO,MUTO, YUHEI. Semiconductor laser device and method for manufacturing the same. EP0114109A2. 1984-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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