Manufacture of semiconductor laser
文献类型：专利
| 作者 | HONDA MASAHARU |
| 发表日期 | 1992-01-14 |
| 专利号 | JP1992010486A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a sufficient concentration without causing a deterioration of a substrate and an active layer by a method wherein an impurity diffused in an N-type clad layer is changed from Se to Si gradually while raising a growing temperature when the N-type clad layer is formed in an AlGaInP-series semiconductor laser. CONSTITUTION:On one main plane 1 of a substrate consisting of N-type GaAs, a buffer layer 2, an N-type clad layer 3, an active layer 4, a P-type clad layer 5, and a cap layer 6 are laminated in order by use of a well-down MOCVD method. At this time, for the buffer layer 2, Se is employed as an N-type impurity and the layer is grown to about 0.3mum thick at 600 deg.C of a growing temperature. For the N-type clad layer 3, a material gas of an N-type impurity is changed from Se to Si gradually while raising the growing temperature from 600 deg.C to 680 deg.C and the layer is grown to about 0.8mum thick. A sufficient carrier concentration can be kept as well as a memory effect into the active layer is restrained. As a result, a reduction in a wavelength of a semiconductor laser and an improvement in a reliability of that can be realized. |
| 公开日期 | 1992-01-14 |
| 申请日期 | 1990-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77164]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | HONDA MASAHARU. Manufacture of semiconductor laser. JP1992010486A. 1992-01-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。