Manufacture of semiconductor device
文献类型：专利
| 作者 | SHIMA KATSUTO |
| 发表日期 | 1985-03-23 |
| 专利号 | JP1985052074A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To form a stripe-shaped groove, whose shape has been little deformed, by method wherein a mask is provided in the direction on a substrate the (100) plane or GaAs ro GaAlAs crystal as its main surface and a wet etching is perfomed thereon. CONSTITUTION:An SiO2 film 22 is formed on a GaAs substrate 21 having the (100) plane as its main surface and a strip-shaped window 23, which stretches to the direction, is provided in the film 22. An etching is performed on the GaAs substrate 21 using the film 22 as a mask and a stripe-shaped groove 24 is formed. Then, the film 22 is removed, an etching is furthermore performed on the GaAs substrate 21 and the cross-sectional shape of the groove 24 is formed into a shape, whose width is gradually enlarged as it goes toward the upper side from the bottom surface and face is smooth. A clad layer 25, an active layer 26, a clad layer 27 and a cap layer 28 are epitaxially grown in liquid- phase in order on the substrate 2 |
| 公开日期 | 1985-03-23 |
| 申请日期 | 1983-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77166]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | SHIMA KATSUTO. Manufacture of semiconductor device. JP1985052074A. 1985-03-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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