Semiconductor laser device
文献类型：专利
| 作者 | NANBARA SEIJI; YAMASHITA KOJI |
| 发表日期 | 1991-12-13 |
| 专利号 | JP1991283483A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable an overall optical output, a front optical output, and the like to be improved in linearity of P-I characteristics and set equal in P-I characteristic form by a method wherein a mirror coat is provided to the rear of a DFB-LD, and all laser beams are emitted from a front side. CONSTITUTION:Metal is evaporated on the rear of a DFB-LD 1 to enable the rear to have a reflectivity of 100%. A part of a front optical output 10 is used as a monitor output 1 When a voltage 6 is applied onto the DFB-LD 11, a drive current is made to flow, and an active layer 2 is made to emit light. A part of light possessed of a certain wavelength is selectively amplified through a diffraction grating 3 to become an oscillation spectrum of a single longitudinal mode. As the rear of the DFB-LD is provided with a mirror coat 5, all the laser beams are emitted forward. An overall optical output 8 is split into a forward optical output 10 and a monitor optical output 11 through a beam splitter 9. By this setup, the overall optical output Pt8, the forward optical output Po10, and a monitoring optical output 11 are all equal in P-I characteristic form and linear in Po-Pm. |
| 公开日期 | 1991-12-13 |
| 申请日期 | 1990-03-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77168]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NANBARA SEIJI,YAMASHITA KOJI. Semiconductor laser device. JP1991283483A. 1991-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。