Semiconductor laser element
文献类型：专利
| 作者 | HAYAKAWA TOSHIROU; SUYAMA NAOHIRO; YAMAMOTO SABUROU |
| 发表日期 | 1985-06-22 |
| 专利号 | JP1985116188A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element structure stabilized in lateral mode with low threshold value by activating the layer thickness controllability of vapor phase growth (MO-CVD) using molecular beam epitaxie (MBE) or organic metal. CONSTITUTION:An N type CaAlAs clad layer (1mum thick) 12, an undoped GaAlAs active layer (0.05mum thick) 13, a P type GaAlAs clad layer (0.1mum thick) 14, an N type GaAs/N type GaAlAs superlattice current blocking layer (0.8mum thick) 16 are continuously grown by MO-CVD method on an N type GaAs substrate 1 Then, the layer 16 is removed by etching in a stripe shape to form a stripe groove (5mum width) 20 to become a current path. After etching, a P type GaAlAs clad layer (0.6mum thick) 18 and a P type GaAs cap layer 19 are sequentially grown, metal such as Au, Zn, Ni is deposited to form an N type side electrode 21 and a P type side electrode 22. Thus, an element structure of a semiconductor laser stabilized in the lateral mode with low threshold value can be obtained. |
| 公开日期 | 1985-06-22 |
| 申请日期 | 1983-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77176]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIROU,SUYAMA NAOHIRO,YAMAMOTO SABUROU. Semiconductor laser element. JP1985116188A. 1985-06-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。