Distributed feedback semiconductor laser
文献类型：专利
| 作者 | NODA SUSUMU; KOJIMA KEISUKE; TAI SHUICHI; OTSUKA KENICHI; SUGIMOTO HIROSHI |
| 发表日期 | 1988-03-18 |
| 专利号 | JP1988062293A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a distributed feedback type semiconductor laser which can operate at a high output, has larger coupling constant and good sole mode property by specifying the mean thickness of a guide layer. CONSTITUTION:The compositions and the thicknesses of layers are fundamentally the same as those of a conventional example, but the mean thickness of a guide layer 7 is increased to 0.25-0.35mum as compared with the conventional one. In the principle of operation, when a current flows between electrodes 1 and 11, a light is generated in an active layer 5, confined in the active layers 5, 7 by upper and lower clad layers 8, 4, selectively amplified to the light of wavelength determined by the period of a diffraction grating provided in the layer 7 to generate a laser. When the mean thickness of the layer 7 is increased, most of the electric field in the laser is distributed in the layer 7. Thus, the rate of the electric field affected by Bragg's reflection by the diffraction grating is increased, and the value of the coupling constant is increased. |
| 公开日期 | 1988-03-18 |
| 申请日期 | 1986-09-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77181]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NODA SUSUMU,KOJIMA KEISUKE,TAI SHUICHI,et al. Distributed feedback semiconductor laser. JP1988062293A. 1988-03-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。