Semiconductor laser device
文献类型：专利
| 作者 | YURI MASAAKI; OTA KAZUNARI |
| 发表日期 | 1990-11-20 |
| 专利号 | JP1990283087A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To realize a NAM-LOC structure by one crystal growing step by sequentially forming a clad layer, a guide layer, an active layer on a GaAs substrate having a protrusion including a reverse mesa face on its upper face by a MOCVD method. CONSTITUTION:After a protrusion 1a having a reverse mesa face on an N-type GaAs substrate 1 is formed by chemical etching, an N-type Al0.5Ga0.5As clad layer 2, an Al0.2Ga0.8As first guide layer 3, an Al0.1Ga0.9As active layer 4, a P-type Al0.5Ga0.5As clad layer 5, a P-type Al0.2Ga0.8As second guide layer 6, a P-type Al0.5Ga0.5As clad layer 7, and a P-type GaAs cap layer 8 are sequentially grown by a MOCVD method. According to this structure, the layer 6 except the upper face of the protrusion, the layer 3 of the upper face of the protrusion or the layer 4 are continuously connected, a NAM-LOC type semiconductor laser device in which the layer 5 is as a NAM region can be realized, and a high output operation can be performed. |
| 公开日期 | 1990-11-20 |
| 申请日期 | 1989-04-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77236]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YURI MASAAKI,OTA KAZUNARI. Semiconductor laser device. JP1990283087A. 1990-11-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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