中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor light-emitting device

文献类型:专利

作者KASUKAWA AKIHIKO; IRIKAWA MASANORI
发表日期1988-08-25
专利号JP1988205979A
著作权人FURUKAWA ELECTRIC CO LTD:THE
国家日本
文献子类发明申请
其他题名Semiconductor light-emitting device
英文摘要PURPOSE:To suppress the leakage during the injection of a high electric current and to improve the temperature dependence of a threshold electric current by a method wherein a clad layer under an active layer is used as a high- resistance electric-current blocking layer except a part directly under the active layer. CONSTITUTION:First clad layers 12a, 12b of n-type InP, an InGaAsP active layer 13 and a second clad layer 14 of p-type InP are grown in succession; after that, this assembly is etched selectively; a mesa stripe reaching the first clad layers 12a, 12b is formed. Then, the mesa stripe region is removed; protons are irradiated; the part 12b out of the first clad layers is made electrically semiinsulating and highly resistant so as to form an electric-current blocking layer. In succession, a third clad layer 15 of p-type InP and a p-type InGaAsP cap layer 16 are formed in succession. By this setup, an electric current is concentrated at the active layer during the injection of the high electric current, and the leakage of the electric current is suppressed. In addition, the temperature dependence of a threshold electric-current value is improved.
公开日期1988-08-25
申请日期1987-02-23
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/77250]  
专题半导体激光器专利数据库
作者单位FURUKAWA ELECTRIC CO LTD:THE
推荐引用方式
GB/T 7714
KASUKAWA AKIHIKO,IRIKAWA MASANORI. Semiconductor light-emitting device. JP1988205979A. 1988-08-25.

入库方式: OAI收割

来源:西安光学精密机械研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。