Manufacture of light emitting element
文献类型：专利
| 作者 | HORIKAWA HIDEAKI; MATOBA AKIHIRO; SANO KAZUYA; YAMADA TOMOYUKI |
| 发表日期 | 1985-11-16 |
| 专利号 | JP1985231378A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of light emitting element |
| 英文摘要 | PURPOSE:To control the thickness of a clad layer accurately and to stabilize the lateral mode oscillation conspicuously, by forming a double-heterojunction structure including an upper clad layer by the first crystal growth. CONSTITUTION:On an N-GaAs substrate 1, the following layers are sequentially grown by the first crystal growing: an N-AlGaAs layer 2 as the first clad layer, which forms a double-heterojunction structure; an AlGaAs layer 3; a p-AlGaAs layer 4; and an N-GaAs layer 5 as an intermediate light-absorbing layer. The growing is performed by the liquid phase epitaxial growing method, which can accurately control the film thickness. Etching is performed, and a protruded part 5a having an inverted mesa structure is formed. An N-AlGaAs layer is grown as an upper layer 6. By utilizing the difference in melt-back speed, a groove 9 is formed. A P-AlGaAs layer 7 can be epitaxially grown on the layer 4. The third clad layer 7 and the second clad layer 4 form a unitary body, which operates as the upper clad layer with respect to the active layer 3. A part 5b and a part 6c operate as a current narrowing layer. |
| 公开日期 | 1985-11-16 |
| 申请日期 | 1984-04-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77256]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HORIKAWA HIDEAKI,MATOBA AKIHIRO,SANO KAZUYA,et al. Manufacture of light emitting element. JP1985231378A. 1985-11-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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