Semiconductor laser
文献类型：专利
| 作者 | NISHI KENICHI |
| 发表日期 | 1986-06-23 |
| 专利号 | JP1986135182A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To synchronize the phase of beams between oscillation regions by forming a region having no waveguide structure by a difference between refractive indices prescribing the striped oscillation regions while being brought into contact with one or both end surfaces in two end surfaces constituting a laser resonator. CONSTITUTION:Ten grooves 42 in 3mum width and 1mum depth are prepared onto a S doped N type InP substrate 41 in response to striped oscillation regions at intervals of 2mum. An optical guide layer 43, an active layer 44, a clad layer 45, a cap layer 46 and a wide electrode 47 extending over all ten grooves are prepared onto the substrate, and a semiconductor laser is prepared through a cleavage so that one end surface extends over a section in which there is the groove and the other end surface a section in which there is no groove and a region having no groove is 10mum wide. Excellent oscillation characteristics of beam-current characteristics having no kink are obtained up to 400mW, and the space mode of output beams from cleavage planes at sections in which there are grooves hardly varies with time, and is equal to the synchronizing of the phase of beams from all striped oscillation regions. Accordingly, the half power angle of the far field pattern of a space mode in the direction of the surface of the active layer is brought to an extremely small value as approximately 3 deg., and a maximum optical output is also made higher than conventional devices by 100mV. |
| 公开日期 | 1986-06-23 |
| 申请日期 | 1984-12-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77258]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NISHI KENICHI. Semiconductor laser. JP1986135182A. 1986-06-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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