Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | SHINOHARA KOUJI; NISHIJIMA YOSHITO; FUKUDA HIROKAZU; YAMAMOTO KOUSAKU |
| 发表日期 | 1985-05-08 |
| 专利号 | JP1985080290A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain the titled device of stable characteristics by a method wherein a crystal surface naturally formed by avoidance of stresses on elements such as polishing and cleavage is made as the resonance surface. CONSTITUTION:An SiO2 2 is laminated on the (100) plane of a water-soluble crystal substrate 1 of BaF2 or the like, and holes are bored 3 in the layer 2. Next, PbTe 4, PbSnTe 5, and PbTe 6 are successively epitaxially formed in a hole 3. These layers have (100) planes appeared on the surfaces; opposed surfaces (e.g. a and a') are optically perfect, having a high degree of parallelism, and can be used as the laser resonance surface. After an Au electrode 7 is attached on the layer 6, and the layers are mounted on a Cu heat sink 8, the substrate is removed by dissolution with water. Next, an Au electrode 9 is attached on the layer 6, and a lead wire 10 is installed, which are then packaged, resulting in completion. |
| 公开日期 | 1985-05-08 |
| 申请日期 | 1983-10-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77264]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | SHINOHARA KOUJI,NISHIJIMA YOSHITO,FUKUDA HIROKAZU,et al. Manufacture of semiconductor light emitting device. JP1985080290A. 1985-05-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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