Semiconductor laser
文献类型：专利
| 作者 | OOTANI SHIYUNJI |
| 发表日期 | 1983-03-14 |
| 专利号 | JP1983043590A |
| 著作权人 | SUMITOMO DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser in a double hetero structure available for single lateral mode oscillation, by forming a projection extended to one direction in a stripe form on a semiconductor substrate and providing a deficit part on a part of a layer on the end part of both side surfaces of the projection. CONSTITUTION:The upper surface of an N type GaAs substrate 10 is coated with a photo resist, a stripe is provided thereon by an exposure, and the projection is formed by a chemical etching with this film as a mask. A P type Ga1-xAlxAs current blocking layer 11 is formed on the substrate of the projection side by a liquid epitaxial growing method. In this case, the deficit part 19 serving as a current concentrated region due to an epitaxial growing speed is formed on both sides of a groove. Next, an N type Ga1-xAlxAs confining layer 12, an n- or P type GaAs active layer 13, a P type Ga1-xAlxAs confining layer 14 and P type GaAs ohmic contact layer 15 are successively formed on the upper surface of the current blocking layer 11 by a liquid epitaxial growing method, a P side electrode 16 is formed on the uppermost layer in a stripe form, and an N side electrode 17 on the substrate 10 resulting in the completion. The N type Ga1-xAlxAs confining layer 12 is formed thick to the degree that deficit parts are not generated. |
| 公开日期 | 1983-03-14 |
| 申请日期 | 1981-09-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77272]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | OOTANI SHIYUNJI. Semiconductor laser. JP1983043590A. 1983-03-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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