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文献类型：专利
| 作者 | OOSHIMA MASAAKI; MATSUKI MICHIO; AKASAKI ISAMU |
| 发表日期 | 1987-04-04 |
| 专利号 | JP1987014957B2 |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To suppress the transverse spread of a current and make a luminescence in a transverse single mode by a method wherein there are formed the first stripe- pattern diffused layer reaching an active layer and second diffused layers reaching a closing layer at both sides of the first diffused layer. CONSTITUTION:A GaAsP grown layer 2, InGaAsP first clad layer 3, GaAsP active layer 4, InGaAsP second clad layer 5 and Al2O3 film 6 are formed on a GaAs substrate Then, the first diffused layer 8 reaching the GaAsP active layer 4 is formed and further, the second diffused layers 9 and 10 for suppressing the spread of the current in the GaAsP active layer 4 are formed on the both sides of the first diffused layer 8. |
| 公开日期 | 1987-04-04 |
| 申请日期 | 1980-05-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77276]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OOSHIMA MASAAKI,MATSUKI MICHIO,AKASAKI ISAMU. -. JP1987014957B2. 1987-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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