Manufacture of semiconductor laser
文献类型：专利
| 作者 | IDOTA TAKESHI |
| 发表日期 | 1991-03-19 |
| 专利号 | JP1991062986A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To simplify a process and prevent thermal damage due to second crystal growth by forming a stripe-shaped groove on a semiconductor substrate and by performing liquid phase growth of a current block layer on the semiconductor substrate, controlling the growth time so that the film thickness of a current block layer within the groove to be deeper than the groove. CONSTITUTION:A stripe-shaped groove 10 is formed on a semiconductor substrate n-InP substrate Then, a p-InP block layer 2a, 2b, an n-InP block layer 3a, 3b, an n-InP clad layer 4, an InGaAsP active layer 5, a p-InP clad layer 6, and a p-InGaAsP layer 7 are allowed to grow in sequence by the liquid phase growth method. In this growth, crystal growth is performed so that the film thickness of a current block layer constituted by the p-InP block layer 2b and the n-InP block layer 3b becomes smaller than the depth of the groove 10. Thus, it is possible to produce a semiconductor laser in diffraction rate waveguide type strip structure by the first crystal growth. Therefore, the process can be simplified and no thermal damage due to second crystal growth is experienced. |
| 公开日期 | 1991-03-19 |
| 申请日期 | 1989-07-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77280]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | IDOTA TAKESHI. Manufacture of semiconductor laser. JP1991062986A. 1991-03-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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