Semiconductor laser device
文献类型：专利
| 作者 | KAZUMURA MASARU; YOSHIKAWA AKIO; OOTA KAZUNARI |
| 发表日期 | 1985-05-18 |
| 专利号 | JP1985088488A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To put the titled device in a structure controllable in current stricture and capable of manufacture with good reproducibility by a method wherein two semiconductor layers having different conductivities are formed on the stepwise difference of a semiconductor substrate having the stepwise difference, and a double hetero structural layer beginning with a layer of the different conductivity type from that of the substrate is formed thereon. CONSTITUTION:An N type GaAs 12 and a P type GaAs 13 are successively grown on the P type GaAs substrate 11 by the liquid phase epitaxial method, and a groove is formed. Then, the double hetero layer consisting of an N- Ga0.7Al0.3As clad layer 15, a non-doped Ga0.95Al0.05As active layer 16, a P- Ga0.7Al0.3As clad layer 17, and a P GaAs contact layer 18 is grown by the liquid phase epitaxial method. Thereafter, the surface of the GaAs 12 is exposed by etching; an electrode metal is laid and made as the N-side electrode, and a metal film 19 is made as the P-side electrode. The current flowing through the layer immediately on the substrate flows to the double-hetero section only from the step wise difference 14 and is then effectively contributed to oscillation under stricture to the stepwise difference. |
| 公开日期 | 1985-05-18 |
| 申请日期 | 1983-10-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77281]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | KAZUMURA MASARU,YOSHIKAWA AKIO,OOTA KAZUNARI. Semiconductor laser device. JP1985088488A. 1985-05-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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