Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | SHIMA KATSUTO |
| 发表日期 | 1986-10-06 |
| 专利号 | JP1986224483A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To restrain the crystal lattice defect and increase the efficiency, by making the (111) A face not be included in the boundary surface with the CONSTITUTION:The N-type InP confined layer 12, the InGaAsP active layer 13, the P-type confined layer 14 and the P-type InGaAsP contact layer 15 are grown in order on the (110) face of the N-type InP substrate 11 by the epitaxial method. On this semiconductor substrate, the mask 16 of the stripe type is formed, and the mesa type etching is performed with the methanol solution of Br. Firstly, about 1 mum width of the right and left sides of the InGaAsP active layer 13 is subject to etching, and next the surface of the mesa stripe is again subjected to etching with the methanol solution of Br. Then the side surface of the mesa stripe forms not the (111) A face but a curved surface. An this semiconductor surface, the P-type InP current-construction layer 17 and the N-type InP current-blocking layer 18 are burried and grown in order. The mask 16 is eliminated, the P-side electrode 19 and the N-side electrode 20 are formed, and the element is completed through the process of cleavage, etc. |
| 公开日期 | 1986-10-06 |
| 申请日期 | 1985-03-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77284]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SHIMA KATSUTO. Manufacture of semiconductor light emitting device. JP1986224483A. 1986-10-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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