Semiconductor laser element
文献类型：专利
| 作者 | YAMASHITA SHIGEO; KAYANE NAOKI; KASHIWADA YASUTOSHI; KAJIMURA TAKASHI; OOUCHI HIROBUMI |
| 发表日期 | 1983-11-15 |
| 专利号 | JP1983196087A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To reduce the unstability of photooutput by a method wherein the width of a narrow stripe region of a semiconductor laser element which has a P type impurity region in the other region except for the above-mentioned stripe region is formed at a value less than a specific value. CONSTITUTION:A P type clad layer 2, an N type, P type or undoped laser active layer 3, and an N type clad layer 4 are formed on a P type semiconductor substrate Further, a cap layer 5 is formed. Next, an impurity diffused region 6 is formed by diffusing a P type impurity in the other region except for the narrow stripe region. It is contrived that the width of the stripe region 10 wherein the above-mentioned P type impurity is not diffused becomes less than 5.0mum. The region 6 is reversely biased when a normal bias voltage is impressed. Therefore, current is brought into stricture efficiently to the region 10 wherein the P type impurity is not diffused, and accordingly a semiconductor laser element having the distribution of gain in a narrow region can be obtained. |
| 公开日期 | 1983-11-15 |
| 申请日期 | 1982-05-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77293]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | YAMASHITA SHIGEO,KAYANE NAOKI,KASHIWADA YASUTOSHI,et al. Semiconductor laser element. JP1983196087A. 1983-11-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。