Manufacture of semiconductor element
文献类型：专利
| 作者 | FUJIMOTO AKIRA; WATANABE HIDEAKI; SHIMURA MIKIHIKO |
| 发表日期 | 1985-04-03 |
| 专利号 | JP1985057696A |
| 著作权人 | TATEISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor element |
| 英文摘要 | PURPOSE:To form a grown layer, which has its surface nearly parallel to the low-index surface of a crystal substrate, on the crystal substrate and to reduce the optical scattering loss of a semiconductor element by a method wherein a certain angle is held in between the surface of the crystal substrate and that of solution, and the substrate and the solution are epitaxially grown in liquid phase. CONSTITUTION:Compound semiconductor solution 25 is laminated on a crystal substrate 24, which has its surface inclined at a certain angle from the low- index surface 26 of the substrate 24. For forming the thickness of the solution 25 into a non-uniform one, a certain angle is held in between the surface of the crystal substrate 24 and the surface of the solution 25 and the crystal substrate 24 and the solution 25 are epitaxially grown in liquid phase. The inclination of the lower part of the solution presser foot 26, which is used at the time of its epitaxial growth, is directed to the same direction as that of the surface of the low-index surface 26 of the crystal substrate 24. A wafer 28 is formed by an epitaxial growth and the wafer 28 is constituted of the crystal substrate 24 having the low-index surface 26 and a grown layer 27. By such a constitution, the optical scattering loss of the semiconductor element is reduced. |
| 公开日期 | 1985-04-03 |
| 申请日期 | 1983-09-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77304]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TATEISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | FUJIMOTO AKIRA,WATANABE HIDEAKI,SHIMURA MIKIHIKO. Manufacture of semiconductor element. JP1985057696A. 1985-04-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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