Semiconductor light emitting element
文献类型：专利
| 作者 | ONODERA NORIAKI |
| 发表日期 | 1990-05-14 |
| 专利号 | JP1990125487A |
| 著作权人 | RICOH CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To oscillate a plurality of laser lights having largely different oscillation wavelengths of lights from the same substrate by employing a multiple quantum well layer as the active layer of a semiconductor light emitting element, and crystal-mixing the predetermined region of the layer by diffusing impurity atoms. CONSTITUTION:Zinc of impurity is diffused in a predetermined part of a region A, and the Zn-diffused region 131A arrives at the lower part of an active layer 103, i.e., a boundary between the layer 103 and an N-type clad layer 124. Since the region 131A is completely enclosed with the layer 103, a multiple quantum well layer formed of a well layer for forming the layer 103 and a barrier layer is crystal-mixed by the impurity Zn, and in the mixed region a forbidden band width wider than that of the layer 103a and narrower than that of the layer 103b. That is, the well layer of the layer 103 of the region A is mixedcrystallized with the region 131A, and the part is formed with AI0.18Ga0.82 As layer. Thus, the mixed region, i.e., the wavelength of the laser light generated from the region A can be largely shortened as compared with that of the laser light generated from a region B. |
| 公开日期 | 1990-05-14 |
| 申请日期 | 1989-07-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77311]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH CO LTD |
| 推荐引用方式 GB/T 7714 | ONODERA NORIAKI. Semiconductor light emitting element. JP1990125487A. 1990-05-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。