Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | ISHIDA TOSHIMASA; KUBOTA TAMAO |
| 发表日期 | 1982-11-02 |
| 专利号 | JP1982178394A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain the titled device in excellent yield and reproducibility by successively forming a GaAs layer, a GaAs layer having the same conduction type as a GaAs single crystal substrate, a GaAs layer having the same conduction type as or a reverse conduction type to the substrate and a GaAs layer having a reverse conduction type to the substrate onto the substrate. CONSTITUTION:An exposing surface is shaped to one part on the main surface of the GaAs single crystal substrate, the first compound semiconductor layer of GaAs, etc. is grown in epitaxial form in a liquid phase by using a melted liquid obtained by adding a P or N type impurity such as a Si impurity into the polycrystal melt of Ga-GaAs, etc., and the second compound semiconductor layer of GaAs, etc. having the same conduction type as the substrate, the third compound semiconductor layer of GaAs, etc. having the same conduction type as or a reverse conduction type to the substrate and the fourth compound semiconductor layer of GaAs, etc. having a reverse conduction type to the substrate are formed successively onto the first compound semiconductor layer. Accordingly, the semiconductor light emitting device having the concentration of current density and high reliability can be obtained at low cost in excellent yield and reproducibility. |
| 公开日期 | 1982-11-02 |
| 申请日期 | 1981-04-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77331]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | ISHIDA TOSHIMASA,KUBOTA TAMAO. Manufacture of semiconductor light emitting device. JP1982178394A. 1982-11-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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