Manufacture of semiconductor laser
文献类型：专利
| 作者 | YAGI KATSUMI |
| 发表日期 | 1989-04-12 |
| 专利号 | JP1989093191A |
| 著作权人 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To perform an etching up to a required depth without inducing a side etching so as to obtain a semiconductor laser excellent in property by a method wherein a layer whose composition turns gradually from that of a clad layer into that of a cap layer is provided between the clad layer and the cap layer. CONSTITUTION:A GaAs buffer 1, an Al0.3Ga0.7As clad layer 2, GaAs active layer 3, and an Al0.3Ga0.7As clad layer 4 are laminated on a substrate. Next, an AlxGa1-xAs layer 5 is formed thereon, where the ingredient (x) changes gradually from 0.3 to 0, and then a GaAs cap layer 6 is overlapped thereon. In this structure, ions are made not to be diffused laterally during ion implantation, so that ion-implantation can be accurately performed up to a certain depth which is determined depending on the accelerating voltage. When etching is performed after the crystallizability is deteriorated through an ion implantation, only the ion implanted region is removed and the etching depth is made uniform, so that a semiconductor laser of a ridge structure can be stably obtained, which is excellent in a property of laterally trapping light rays. |
| 公开日期 | 1989-04-12 |
| 申请日期 | 1987-10-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/77335]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | YAGI KATSUMI. Manufacture of semiconductor laser. JP1989093191A. 1989-04-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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